{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2020:ZA4NTCJ7RWHCAVOU533II6XMJP","short_pith_number":"pith:ZA4NTCJ7","schema_version":"1.0","canonical_sha256":"c838d9893f8d8e2055d4eef6847aec4bcd1f8ac03d14a9d72a56d074ea63c106","source":{"kind":"arxiv","id":"2012.08829","version":3},"attestation_state":"computed","paper":{"title":"Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Angelo Messina, Corrado Bongiorno, Fabrizio Roccaforte, Filippo Giannazzo, Mario Saggio, Patrick Fiorenza, Santi Alessandrino","submitted_at":"2020-12-16T09:58:29Z","abstract_excerpt":"In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V-1s-1) than PDA in N2O (20 cm2V-1s-1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. This latter could be also deduced from the behavior of the capacitance-voltage characteristics of 4H-SiC MOSFETs measured in gate controlle"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2012.08829","kind":"arxiv","version":3},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2020-12-16T09:58:29Z","cross_cats_sorted":[],"title_canon_sha256":"934fb400453e14fb573045ae34a5922fce548e32834fca3b27eba7084d681496","abstract_canon_sha256":"46a941f7c12790e3aa50b410c4fd9d45373be22e1398f1d3bc432253642532d6"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T03:01:50.037762Z","signature_b64":"NXOaLBDhT0dFOYVI5bL3DZlqgeP0RXRsUZVOlHW2LdgoAF4nozqSP0SfRo5jRG64rdYSo9n0S5h+Pgi8sDLCBw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"c838d9893f8d8e2055d4eef6847aec4bcd1f8ac03d14a9d72a56d074ea63c106","last_reissued_at":"2026-07-05T03:01:50.037249Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T03:01:50.037249Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Angelo Messina, Corrado Bongiorno, Fabrizio Roccaforte, Filippo Giannazzo, Mario Saggio, Patrick Fiorenza, Santi Alessandrino","submitted_at":"2020-12-16T09:58:29Z","abstract_excerpt":"In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V-1s-1) than PDA in N2O (20 cm2V-1s-1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. This latter could be also deduced from the behavior of the capacitance-voltage characteristics of 4H-SiC MOSFETs measured in gate controlle"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2012.08829","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2012.08829/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2012.08829","created_at":"2026-07-05T03:01:50.037307+00:00"},{"alias_kind":"arxiv_version","alias_value":"2012.08829v3","created_at":"2026-07-05T03:01:50.037307+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2012.08829","created_at":"2026-07-05T03:01:50.037307+00:00"},{"alias_kind":"pith_short_12","alias_value":"ZA4NTCJ7RWHC","created_at":"2026-07-05T03:01:50.037307+00:00"},{"alias_kind":"pith_short_16","alias_value":"ZA4NTCJ7RWHCAVOU","created_at":"2026-07-05T03:01:50.037307+00:00"},{"alias_kind":"pith_short_8","alias_value":"ZA4NTCJ7","created_at":"2026-07-05T03:01:50.037307+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP","json":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP.json","graph_json":"https://pith.science/api/pith-number/ZA4NTCJ7RWHCAVOU533II6XMJP/graph.json","events_json":"https://pith.science/api/pith-number/ZA4NTCJ7RWHCAVOU533II6XMJP/events.json","paper":"https://pith.science/paper/ZA4NTCJ7"},"agent_actions":{"view_html":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP","download_json":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP.json","view_paper":"https://pith.science/paper/ZA4NTCJ7","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2012.08829&json=true","fetch_graph":"https://pith.science/api/pith-number/ZA4NTCJ7RWHCAVOU533II6XMJP/graph.json","fetch_events":"https://pith.science/api/pith-number/ZA4NTCJ7RWHCAVOU533II6XMJP/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP/action/timestamp_anchor","attest_storage":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP/action/storage_attestation","attest_author":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP/action/author_attestation","sign_citation":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP/action/citation_signature","submit_replication":"https://pith.science/pith/ZA4NTCJ7RWHCAVOU533II6XMJP/action/replication_record"}},"created_at":"2026-07-05T03:01:50.037307+00:00","updated_at":"2026-07-05T03:01:50.037307+00:00"}