{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2019:ZL5D3CJN3RIS7VYNPMTRCL4JV4","short_pith_number":"pith:ZL5D3CJN","schema_version":"1.0","canonical_sha256":"cafa3d892ddc512fd70d7b27112f89af3d01bfc2b4a887824ea5f63e7da90741","source":{"kind":"arxiv","id":"1908.05853","version":1},"attestation_state":"computed","paper":{"title":"Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Digbijoy N. Nath, R. Muralidharan, Sandeep Kumar, Sandeep Vura, Sudhiranjan Tripathy, Surani B. Dolmanan","submitted_at":"2019-08-16T05:42:28Z","abstract_excerpt":"We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and 124 nm respectively. The recess etched region had a roughness of 0.7 nm. Various recess etch depths and dielectric annealing conditions were used to tune the VTH. The optimized device exhibited on-current and VTH of 500 mA/mm and 5 V respectively. The measured breakdown characteristics of the devices and their limitations were investigated using 2D-TCAD devic"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1908.05853","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-08-16T05:42:28Z","cross_cats_sorted":[],"title_canon_sha256":"018068fce97d9cb1893452287d76613fbf16f5981a9df9003532ed9664f87a09","abstract_canon_sha256":"616a05f95600499059df8fa6652e551c2db29853a0eb209a01556698bb03ca66"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-04T23:57:53.717682Z","signature_b64":"j9GXfdkNCckK0Lkdl2b8aoc9RrFi8XKoRLQkQF+U6U4VujlFJDAdqMuZ49Og0C9ESc3wSWuajxKqM+tNK6qQBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"cafa3d892ddc512fd70d7b27112f89af3d01bfc2b4a887824ea5f63e7da90741","last_reissued_at":"2026-07-04T23:57:53.717228Z","signature_status":"signed_v1","first_computed_at":"2026-07-04T23:57:53.717228Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Digbijoy N. Nath, R. Muralidharan, Sandeep Kumar, Sandeep Vura, Sudhiranjan Tripathy, Surani B. Dolmanan","submitted_at":"2019-08-16T05:42:28Z","abstract_excerpt":"We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and 124 nm respectively. The recess etched region had a roughness of 0.7 nm. Various recess etch depths and dielectric annealing conditions were used to tune the VTH. The optimized device exhibited on-current and VTH of 500 mA/mm and 5 V respectively. The measured breakdown characteristics of the devices and their limitations were investigated using 2D-TCAD devic"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1908.05853","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/1908.05853/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1908.05853","created_at":"2026-07-04T23:57:53.717291+00:00"},{"alias_kind":"arxiv_version","alias_value":"1908.05853v1","created_at":"2026-07-04T23:57:53.717291+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1908.05853","created_at":"2026-07-04T23:57:53.717291+00:00"},{"alias_kind":"pith_short_12","alias_value":"ZL5D3CJN3RIS","created_at":"2026-07-04T23:57:53.717291+00:00"},{"alias_kind":"pith_short_16","alias_value":"ZL5D3CJN3RIS7VYN","created_at":"2026-07-04T23:57:53.717291+00:00"},{"alias_kind":"pith_short_8","alias_value":"ZL5D3CJN","created_at":"2026-07-04T23:57:53.717291+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4","json":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4.json","graph_json":"https://pith.science/api/pith-number/ZL5D3CJN3RIS7VYNPMTRCL4JV4/graph.json","events_json":"https://pith.science/api/pith-number/ZL5D3CJN3RIS7VYNPMTRCL4JV4/events.json","paper":"https://pith.science/paper/ZL5D3CJN"},"agent_actions":{"view_html":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4","download_json":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4.json","view_paper":"https://pith.science/paper/ZL5D3CJN","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1908.05853&json=true","fetch_graph":"https://pith.science/api/pith-number/ZL5D3CJN3RIS7VYNPMTRCL4JV4/graph.json","fetch_events":"https://pith.science/api/pith-number/ZL5D3CJN3RIS7VYNPMTRCL4JV4/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4/action/timestamp_anchor","attest_storage":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4/action/storage_attestation","attest_author":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4/action/author_attestation","sign_citation":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4/action/citation_signature","submit_replication":"https://pith.science/pith/ZL5D3CJN3RIS7VYNPMTRCL4JV4/action/replication_record"}},"created_at":"2026-07-04T23:57:53.717291+00:00","updated_at":"2026-07-04T23:57:53.717291+00:00"}