Chioko Kaneta

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Papers (2)

1. Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential cond-mat.mtrl-sci · 2018 · author #4
2. Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential cond-mat.mtrl-sci · 2018 · author #5

Mentions

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Frequent Coauthors

• Asuka Hatano 2 shared papers
• Satoshi Izumi 2 shared papers
• So Takamoto 2 shared papers
• Takahiro Yamasaki 2 shared papers
• Takahisa Ohno 2 shared papers
• Jun Nara 1 shared papers