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Peide D. Ye

Identifiers

  • name variant Peide D. Ye 0.60 · backfill

Papers (41)

  1. Surface lone-pair polarization probed by quantum-geometric transport in tellurium cond-mat.mes-hall · 2026 · author #8
  2. A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors physics.app-ph · 2019 · author #3
  3. Thermoelectric Performance of 2D Tellurium with Accumulation Contacts cond-mat.mtrl-sci · 2018 · author #8
  4. On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack physics.app-ph · 2018 · author #3
  5. Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors cond-mat.mes-hall · 2018 · author #9
  6. Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene cond-mat.mtrl-sci · 2018 · author #7
  7. Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate physics.app-ph · 2017 · author #5
  8. $\beta$-Ga$_2$O$_3$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications cond-mat.mtrl-sci · 2017 · author #4
  9. 1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport cond-mat.mtrl-sci · 2017 · author #7
  10. Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors cond-mat.mes-hall · 2017 · author #11
  11. Field-effect transistors made from solution-grown two-dimensional tellurene cond-mat.mtrl-sci · 2017 · author #11
  12. \b{eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect cond-mat.mes-hall · 2017 · author #5
  13. High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm cond-mat.mes-hall · 2016 · author #6
  14. Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping cond-mat.mtrl-sci · 2016 · author #4
  15. Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio cond-mat.mtrl-sci · 2016 · author #6
  16. Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5 cond-mat.mtrl-sci · 2016 · author #10
  17. Weak Localization in Few-Layer Black Phosphorus cond-mat.mtrl-sci · 2016 · author #4
  18. Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts cond-mat.mtrl-sci · 2015 · author #6
  19. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus cond-mat.mes-hall · 2015 · author #7
  20. Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications cond-mat.mtrl-sci · 2014 · author #4
  21. Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors cond-mat.mtrl-sci · 2014 · author #4
  22. Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 cond-mat.mtrl-sci · 2014 · author #11
  23. Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs cond-mat.mtrl-sci · 2014 · author #6
  24. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling cond-mat.mtrl-sci · 2014 · author #4
  25. Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density cond-mat.mes-hall · 2014 · author #4
  26. Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode cond-mat.mes-hall · 2014 · author #10
  27. High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um) cond-mat.mtrl-sci · 2014 · author #11
  28. The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights cond-mat.mes-hall · 2014 · author #5
  29. MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts cond-mat.mtrl-sci · 2014 · author #7
  30. Phosphorene: A New 2D Material with High Carrier Mobility cond-mat.mes-hall · 2014 · author #5
  31. Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers cond-mat.mes-hall · 2013 · author #9
  32. Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor cond-mat.mes-hall · 2013 · author #4
  33. Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances cond-mat.mtrl-sci · 2013 · author #5
  34. Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films cond-mat.mes-hall · 2013 · author #8
  35. Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs cond-mat.mes-hall · 2013 · author #5
  36. Channel Length Scaling of MoS2 MOSFETs cond-mat.mtrl-sci · 2012 · author #3
  37. Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion cond-mat.mes-hall · 2012 · author #6
  38. The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition cond-mat.mes-hall · 2012 · author #4
  39. MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric cond-mat.mtrl-sci · 2011 · author #2
  40. First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach cond-mat.mes-hall · 2011 · author #6
  41. Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors cond-mat.mtrl-sci · 2011 · author #2

Mentions

  • 1503.07392 #6 · backfill · confidence 0.70 Peide D. Ye
  • 1503.06167 #7 · backfill · confidence 0.70 Peide D. Ye
  • 1411.0056 #4 · backfill · confidence 0.70 Peide D. Ye
  • 1410.8201 #4 · backfill · confidence 0.70 Peide D. Ye
  • 1410.2563 #11 · backfill · confidence 0.70 Peide D. Ye
  • 1410.0994 #6 · backfill · confidence 0.70 Peide D. Ye
  • 2605.31197 #8 · arxiv_oai · confidence 0.70 Peide D. Ye
  • 1408.4206 #4 · backfill · confidence 0.70 Peide D. Ye
  • 1408.3753 #4 · backfill · confidence 0.70 Peide D. Ye
  • 1407.3430 #10 · backfill · confidence 0.70 Peide D. Ye
  • 1406.4492 #11 · backfill · confidence 0.70 Peide D. Ye
  • 1405.3010 #5 · backfill · confidence 0.70 Peide D. Ye
  • 1403.5485 #7 · backfill · confidence 0.70 Peide D. Ye
  • 1401.4133 #5 · backfill · confidence 0.70 Peide D. Ye
  • 1312.5379 #9 · backfill · confidence 0.70 Peide D. Ye
  • 1308.0633 #4 · backfill · confidence 0.70 Peide D. Ye
  • 1307.7643 #5 · backfill · confidence 0.70 Peide D. Ye
  • 1303.0776 #8 · backfill · confidence 0.70 Peide D. Ye
  • 1302.5660 #5 · backfill · confidence 0.70 Peide D. Ye
  • 1209.2525 #3 · backfill · confidence 0.70 Peide D. Ye
  • 1204.1665 #6 · backfill · confidence 0.70 Peide D. Ye
  • 1202.3391 #4 · backfill · confidence 0.70 Peide D. Ye
  • 1112.4397 #2 · backfill · confidence 0.70 Peide D. Ye
  • 1112.3573 #6 · backfill · confidence 0.70 Peide D. Ye
  • 1108.1333 #2 · backfill · confidence 0.70 Peide D. Ye

Frequent Coauthors