X. Kan
Identifiers
- name variant X. Kan 0.60 · backfill
Papers (1)
- Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator cond-mat.mtrl-sci · 2010 · author #3
Mentions
- 1005.0449 #3 · backfill · confidence 0.70 X. Kan