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L. Geelhaar

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Papers (7)

  1. Spectrally narrow exciton luminescence from monolayer MoS2 exfoliated onto epitaxially grown hexagonal BN cond-mat.mtrl-sci · 2018 · author #9
  2. The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires cond-mat.mes-hall · 2017 · author #8
  3. Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency cond-mat.mes-hall · 2017 · author #6
  4. Crystal-phase quantum dots in GaN quantum wires cond-mat.mes-hall · 2016 · author #7
  5. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires cond-mat.mes-hall · 2015 · author #8
  6. Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence cond-mat.mtrl-sci · 2014 · author #7
  7. Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency cond-mat.mes-hall · 2014 · author #7

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