A. T. Neal

Identifiers

• name variant A. T. Neal 0.60 · backfill

Papers (2)

1. 20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec cond-mat.mes-hall · 2012 · author #5
2. III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D cond-mat.mes-hall · 2012 · author #4

Mentions

• 1212.4227 #5 · backfill · confidence 0.70 A. T. Neal
• 1212.4225 #4 · backfill · confidence 0.70 A. T. Neal

Frequent Coauthors

• J. J. Gu 2 shared papers
• J. Shao 2 shared papers
• M. J. Manfra 2 shared papers
• P. D. Ye 2 shared papers
• R. G. Gordon 2 shared papers
• X. W. Wang 2 shared papers
• H. Wu 1 shared papers