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Jaswant S Rathore

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Papers (3)

  1. Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates physics.app-ph · 2018 · author #2
  2. Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy physics.app-ph · 2018 · author #2
  3. Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures cond-mat.mtrl-sci · 2018 · author #2

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