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P\"aivi T\"orm\"a (1

Identifiers

  • name variant P\"aivi T\"orm\"a (1 0.60 · backfill

Papers (1)

  1. High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric cond-mat.mes-hall · 2008 · author #8

Mentions

  • 0801.2359 #8 · backfill · confidence 0.70 P\"aivi T\"orm\"a (1

Frequent Coauthors