Wenguang Zhu
Identifiers
- name variant Wenguang Zhu 0.60 · backfill
Papers (17)
- Van der Waals heteroepitaxial growth of monolayer Sb in puckered honeycomb structure cond-mat.mtrl-sci · 2019 · author #10
- Non-volatile ferroelectric memory effect in ultrathin {\alpha}-In2Se3 cond-mat.mtrl-sci · 2018 · author #10
- A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layers cond-mat.mtrl-sci · 2018 · author #5
- High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators cond-mat.mtrl-sci · 2015 · author #6
- Correlation effects in (111) bilayers of perovskite transition-metal oxides cond-mat.str-el · 2013 · author #2
- Strain tuning of topological band order in cubic semiconductors cond-mat.mtrl-sci · 2012 · author #2
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study cond-mat.mtrl-sci · 2012 · author #3
- Electrical Tuning of Valley Magnetic Moment via Symmetry Control cond-mat.mes-hall · 2012 · author #7
- Tailoring Magnetic Doping in the Topological Insulator Bi2Se3 cond-mat.mtrl-sci · 2012 · author #2
- Suppression of Grain Boundaries in Graphene Growth on Superstructured Mn-Cu(111) Surface cond-mat.mtrl-sci · 2011 · author #6
- Possible interaction driven topological phases in (111) bilayers of LaNiO3 cond-mat.str-el · 2011 · author #2
- Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures cond-mat.mtrl-sci · 2011 · author #2
- CO Oxidation Facilitated by Robust Surface States on Au-Covered Topological Insulators cond-mat.mtrl-sci · 2011 · author #2
- Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators cond-mat.mtrl-sci · 2010 · author #5
- Adsorbate-induced Restructuring of Pb mesas Grown on Vicinal Si(111) in the Quantum Regime cond-mat.mtrl-sci · 2009 · author #2
- Contrasting Behavior of Carbon Nucleation in the Initial Stages of Graphene Epitaxial Growth on Stepped Metal Surfaces cond-mat.mes-hall · 2009 · author #2
- Optimization of Mn Doping in Group-IV-based Dilute Magnetic Semiconductors by Electronic Co-dopants cond-mat.mtrl-sci · 2009 · author #2
Mentions
- 1209.1970 #2 · backfill · confidence 0.70 Wenguang Zhu
- 1209.1964 #3 · backfill · confidence 0.70 Wenguang Zhu
- 1208.6069 #7 · backfill · confidence 0.70 Wenguang Zhu
- 1205.3936 #2 · backfill · confidence 0.70 Wenguang Zhu
- 1112.2283 #6 · backfill · confidence 0.70 Wenguang Zhu
- 1109.1551 #2 · backfill · confidence 0.70 Wenguang Zhu
- 1106.4296 #2 · backfill · confidence 0.70 Wenguang Zhu
- 1104.1467 #2 · backfill · confidence 0.70 Wenguang Zhu
- 1008.0057 #5 · backfill · confidence 0.70 Wenguang Zhu
- 0910.4470 #2 · backfill · confidence 0.70 Wenguang Zhu
- 0910.3995 #2 · backfill · confidence 0.70 Wenguang Zhu
- 0903.2542 #2 · backfill · confidence 0.70 Wenguang Zhu
Frequent Coauthors
- Di Xiao 9 shared papers
- Zhenyu Zhang 7 shared papers
- Hua Chen 5 shared papers
- Yugui Yao 4 shared papers
- Satoshi Okamoto 3 shared papers
- Wanxiang Feng 3 shared papers
- Efthimios Kaxiras 2 shared papers
- G. Malcolm Stocks 2 shared papers
- Hualing Zeng 2 shared papers
- Naoto Nagaosa 2 shared papers
- Siyuan Wan 2 shared papers
- Wang Yao 2 shared papers
- Wei Li 2 shared papers
- Xiaoyu Mao 2 shared papers
- Ying Ran 2 shared papers
- Yue Li 2 shared papers
- Aaron Jones 1 shared papers
- Alexander Ako Khajetoorians 1 shared papers
- Anmin Nie 1 shared papers
- Chen Wang 1 shared papers