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Eckhart Fretwurst

Identifiers

  • name variant Eckhart Fretwurst 0.60 · backfill

Papers (13)

  1. A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation physics.ins-det · 2019 · author #2
  2. Study of point- and cluster-defects in radiation-damaged silicon physics.ins-det · 2018 · author #2
  3. Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser physics.ins-det · 2014 · author #2
  4. Study of X-ray radiation damage in the AGIPD sensor for the European XFEL physics.ins-det · 2013 · author #2
  5. Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors physics.ins-det · 2013 · author #2
  6. Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors physics.ins-det · 2013 · author #3
  7. Challenges for Silicon Pixel Sensors at the European XFEL physics.ins-det · 2012 · author #3
  8. Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL physics.ins-det · 2012 · author #2
  9. Charge losses in segmented silicon sensors at the Si-SiO2 interface physics.ins-det · 2012 · author #2
  10. Study of X-ray Radiation Damage in Silicon Sensors physics.ins-det · 2011 · author #2
  11. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon physics.ins-det · 2011 · author #3
  12. Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes physics.ins-det · 2010 · author #3
  13. Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields physics.ins-det · 2010 · author #2

Mentions

  • 1007.4735 #3 · backfill · confidence 0.70 Eckhart Fretwurst
  • 1007.4432 #2 · backfill · confidence 0.70 Eckhart Fretwurst

Frequent Coauthors