pith. sign in

Kosuke Nagashio

Identifiers

  • name variant Kosuke Nagashio 0.60 · backfill

Papers (19)

  1. Influence of interface dipole layers on the performance of graphene field effect transistors cond-mat.mtrl-sci · 2019 · author #3
  2. Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes physics.app-ph · 2019 · author #5
  3. Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule cond-mat.mtrl-sci · 2018 · author #2
  4. Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET physics.app-ph · 2018 · author #3
  5. Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs physics.app-ph · 2018 · author #4
  6. Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride / Metal Interface cond-mat.mtrl-sci · 2018 · author #4
  7. 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source physics.app-ph · 2018 · author #7
  8. Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor cond-mat.mtrl-sci · 2018 · author #2
  9. Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition cond-mat.mtrl-sci · 2017 · author #2
  10. Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride cond-mat.mtrl-sci · 2016 · author #4
  11. Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics cond-mat.mtrl-sci · 2016 · author #2
  12. Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition cond-mat.mtrl-sci · 2016 · author #2
  13. Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride cond-mat.mtrl-sci · 2016 · author #4
  14. Gap state analysis in electric-field-induced band gap for bilayer graphene cond-mat.mtrl-sci · 2015 · author #2
  15. Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators cond-mat.mtrl-sci · 2014 · author #2
  16. The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity cond-mat.mtrl-sci · 2013 · author #2
  17. DOS-limited contact resistance in graphene FETs cond-mat.mtrl-sci · 2011 · author #1
  18. Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FET cond-mat.mtrl-sci · 2010 · author #1
  19. Mobility variations in mono- and multi-layer graphene films cond-mat.mtrl-sci · 2008 · author #1

Mentions

  • 1402.6060 #2 · backfill · confidence 0.70 Kosuke Nagashio
  • 1307.0690 #2 · backfill · confidence 0.70 Kosuke Nagashio
  • 1104.1818 #1 · backfill · confidence 0.70 Kosuke Nagashio
  • 1004.2074 #1 · backfill · confidence 0.70 Kosuke Nagashio
  • 0812.2107 #1 · backfill · confidence 0.70 Kosuke Nagashio

Frequent Coauthors