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Takuma Kobayashi

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Papers (5)

  1. Influence of vacuum annealing on interface properties of SiC (0001) MOS structures cond-mat.mtrl-sci · 2019 · author #2
  2. Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing cond-mat.mtrl-sci · 2019 · author #1
  3. Native point defects and carbon clusters in 4H-SiC: A hybrid functional study cond-mat.mtrl-sci · 2019 · author #1
  4. Carbon Ejection from a SiO2/SiC(0001) Interface by Annealing in High-Purity Ar cond-mat.mtrl-sci · 2017 · author #1
  5. Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry cond-mat.mtrl-sci · 2017 · author #1

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