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Jonas L\"ahnemann

Identifiers

  • name variant Jonas L\"ahnemann 0.60 · backfill

Papers (20)

  1. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation physics.app-ph · 2019 · author #3
  2. Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors cond-mat.mes-hall · 2019 · author #5
  3. Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures physics.app-ph · 2019 · author #3
  4. Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars cond-mat.mes-hall · 2018 · author #1
  5. Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors physics.app-ph · 2017 · author #9
  6. Near-infrared intersubband photodetection in GaN/AlN nanowires cond-mat.mtrl-sci · 2017 · author #1
  7. Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime cond-mat.mes-hall · 2016 · author #1
  8. UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices cond-mat.mes-hall · 2016 · author #1
  9. Radial Stark effect in (In,Ga)N nanowires cond-mat.mtrl-sci · 2016 · author #1
  10. Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy cond-mat.mtrl-sci · 2015 · author #2
  11. Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires cond-mat.mtrl-sci · 2014 · author #4
  12. Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy cond-mat.mtrl-sci · 2014 · author #1
  13. Luminescence associated with stacking faults in GaN cond-mat.mtrl-sci · 2014 · author #1
  14. Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers cond-mat.mtrl-sci · 2013 · author #4
  15. Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures cond-mat.mes-hall · 2012 · author #2
  16. Current path in light emitting diodes based on nanowire ensembles cond-mat.mes-hall · 2012 · author #3
  17. Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments cond-mat.mtrl-sci · 2012 · author #2
  18. Direct experimental determination of the spontaneous polarization of GaN cond-mat.mtrl-sci · 2012 · author #1
  19. Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure cond-mat.mtrl-sci · 2011 · author #1
  20. Epitaxial interfaces between crystallographically mismatched materials cond-mat.mtrl-sci · 2011 · author #4

Mentions

  • 1301.4138 #4 · backfill · confidence 0.70 Jonas L\"ahnemann
  • 1210.7597 #2 · backfill · confidence 0.70 Jonas L\"ahnemann
  • 1210.7144 #3 · backfill · confidence 0.70 Jonas L\"ahnemann
  • 1201.6540 #2 · backfill · confidence 0.70 Jonas L\"ahnemann
  • 1201.4294 #1 · backfill · confidence 0.70 Jonas L\"ahnemann
  • 1109.6039 #1 · backfill · confidence 0.70 Jonas L\"ahnemann
  • 1106.2955 #4 · backfill · confidence 0.70 Jonas L\"ahnemann

Frequent Coauthors