pith. sign in

J. Neugebauer

Identifiers

  • name variant J. Neugebauer 0.60 · backfill

Papers (17)

  1. Adsorption and desorption of hydrogen at nonpolar GaN(1-100) surfaces: Kinetics and impact on surface vibrational and electronic properties cond-mat.mtrl-sci · 2017 · author #2
  2. Ab initio explanation of disorder and off-stoichiometry in Fe-Mn-Al-C kappa carbides cond-mat.mtrl-sci · 2017 · author #9
  3. Scale bridging description of coherent phase equilibria in the presence of surfaces and interfaces cond-mat.mtrl-sci · 2016 · author #7
  4. Non-linear elastic effects in phase field crystal and amplitude equations: Comparison to ab initio simulations of bcc metals and graphene cond-mat.mtrl-sci · 2016 · author #4
  5. From wetting to melting along grain boundaries using phase field and sharp interface methods cond-mat.mtrl-sci · 2014 · author #3
  6. Phase field modelling of grain boundary premelting using obstacle potentials cond-mat.mtrl-sci · 2014 · author #3
  7. The influence of short range forces on melting along grain boundaries cond-mat.mtrl-sci · 2014 · author #4
  8. Dangling bonds in a-Si:H revisited: A combined Multifrequency EPR and DFT Study cond-mat.mtrl-sci · 2011 · author #9
  9. Ab-initio simulation and experimental validation of beta-titanium alloys cond-mat.mtrl-sci · 2008 · author #5
  10. Role of semicore states in the electronic structure of group-III nitrides: An exact exchange study cond-mat.mtrl-sci · 2005 · author #6
  11. Gallium adsorption on (0001) GaN surfaces cond-mat.mtrl-sci · 2003 · author #6
  12. Point defects on III-V semiconductor surfaces cond-mat.mtrl-sci · 2000 · author #2
  13. Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110) cond-mat.mtrl-sci · 2000 · author #7
  14. Novel Reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors physics.comp-ph · 1998 · author #2
  15. Adatom Diffusion at GaN (0001) and (000bar1) Surfaces cond-mat · 1998 · author #2
  16. Electronic and structural properties of vacancies on and below the GaP(110) surface cond-mat.mtrl-sci · 1997 · author #3
  17. Role of defects and impurities in doping of GaN mtrl-th · 1996 · author #1

Mentions

  • 1103.5641 #9 · backfill · confidence 0.70 J. Neugebauer
  • 0811.0157 #5 · backfill · confidence 0.70 J. Neugebauer

Frequent Coauthors