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Gerhard Klimeck

Identifiers

  • name variant Gerhard Klimeck 0.60 · backfill

Papers (121)

  1. Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films physics.app-ph · 2018 · author #7
  2. Channel thickness optimization for ultra thin and 2D chemically doped TFETs physics.comp-ph · 2018 · author #5
  3. Explicit screening full band quantum transport model for semiconductor nanodevices physics.app-ph · 2018 · author #4
  4. Switching Mechanism and the Scalability of vertical-TFETs cond-mat.mtrl-sci · 2017 · author #4
  5. Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors cond-mat.mes-hall · 2017 · author #4
  6. Sensitivity Challenge of Steep Transistors cond-mat.mes-hall · 2017 · author #4
  7. Optimization of edge state velocity in the integer quantum Hall regime cond-mat.mes-hall · 2017 · author #6
  8. Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions cond-mat.mes-hall · 2017 · author #5
  9. All-electrical control of donor-bound electron spin qubits in silicon cond-mat.mes-hall · 2017 · author #3
  10. Two-electron states of a group V donor in silicon from atomistic full configuration interaction cond-mat.mes-hall · 2017 · author #6
  11. Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability quant-ph · 2017 · author #6
  12. Control of interlayer delocalization in 2H transition metal dichalcogenides cond-mat.mes-hall · 2017 · author #13
  13. Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions cond-mat.mes-hall · 2017 · author #6
  14. Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network cond-mat.mtrl-sci · 2017 · author #5
  15. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs cond-mat.mes-hall · 2017 · author #8
  16. Impact of Dimensionality on PN Junctions cond-mat.mes-hall · 2016 · author #5
  17. Performance degradation of superlattice MOSFETs due to scattering in the contacts cond-mat.mes-hall · 2016 · author #4
  18. Transport in vertically stacked hetero-structures from 2D materials cond-mat.mtrl-sci · 2016 · author #5
  19. Scalable GaSb/InAs tunnel FETs with non-uniform body thickness cond-mat.mes-hall · 2016 · author #4
  20. Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene cond-mat.mes-hall · 2016 · author #4
  21. Characterizing Si:P quantum dot qubits with spin resonance techniques cond-mat.mes-hall · 2016 · author #3
  22. P-Type Tunnel FETs With Triple Heterojunctions cond-mat.mes-hall · 2016 · author #4
  23. Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass cond-mat.mes-hall · 2016 · author #5
  24. High-Performance Complementary III-V Tunnel FETs with Strain Engineering cond-mat.mes-hall · 2016 · author #6
  25. Design Rules for High Performance Tunnel Transistors from 2D Materials cond-mat.mes-hall · 2016 · author #2
  26. Transferable tight binding model for strained group IV and III-V materials and heterostructures cond-mat.mtrl-sci · 2016 · author #5
  27. Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions cond-mat.mes-hall · 2016 · author #5
  28. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors cond-mat.mes-hall · 2015 · author #3
  29. Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method cond-mat.mes-hall · 2015 · author #5
  30. NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law cs.DC · 2015 · author #7
  31. Bulk and sub-surface donor bound excitons in silicon under electric fields cond-mat.mes-hall · 2015 · author #6
  32. Silicon quantum processor with robust long-distance qubit couplings cond-mat.mes-hall · 2015 · author #6
  33. From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling cond-mat.mes-hall · 2015 · author #3
  34. Can Tunnel Transistors Scale Below 10nm? cond-mat.mes-hall · 2015 · author #2
  35. Universal Behavior of Strain in Quantum Dots cond-mat.mes-hall · 2015 · author #3
  36. Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET cond-mat.mes-hall · 2015 · author #3
  37. Dielectric Engineered Tunnel Field-Effect Transistor cond-mat.mes-hall · 2015 · author #3
  38. Surface Passivation in Empirical Tight Binding cond-mat.mtrl-sci · 2015 · author #5
  39. Engineering inter-qubit exchange coupling between donor bound electrons in silicon cond-mat.mes-hall · 2015 · author #4
  40. A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations cond-mat.mes-hall · 2015 · author #4
  41. In-surface confinement of topological insulator nanowire surface states cond-mat.mtrl-sci · 2015 · author #5
  42. Transferable tight binding model for strained group IV and III-V heterostructures cond-mat.mtrl-sci · 2015 · author #5
  43. Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon cond-mat.mes-hall · 2015 · author #4
  44. Scaling Theory of Electrically Doped 2D Transistors cond-mat.mes-hall · 2015 · author #2
  45. Electrically controlling single spin qubits in a continuous microwave field cond-mat.mes-hall · 2015 · author #10
  46. Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution cond-mat.mtrl-sci · 2015 · author #5
  47. Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots cond-mat.mes-hall · 2015 · author #13
  48. Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs cond-mat.mes-hall · 2015 · author #5
  49. Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials physics.comp-ph · 2015 · author #4
  50. Spin-lattice relaxation times of single donors and donor clusters in silicon cond-mat.mes-hall · 2015 · author #6
  51. Anisotropic strain in SmSe and SmTe: implications for electronic transport cond-mat.mes-hall · 2014 · author #4
  52. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory cond-mat.mes-hall · 2014 · author #7
  53. Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures cond-mat.mes-hall · 2014 · author #4
  54. Coherent Control of a Single Silicon-29 Nuclear Spin Qubit cond-mat.mes-hall · 2014 · author #6
  55. Atomistic and continuum modeling of a zincblende quantum dot heterostructure cond-mat.mes-hall · 2014 · author #5
  56. Brillouin zone unfolding method for effective phonon spectra cond-mat.mes-hall · 2014 · author #5
  57. An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance cond-mat.mtrl-sci · 2013 · author #5
  58. An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and Validation cond-mat.mtrl-sci · 2013 · author #5
  59. Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces cond-mat.mtrl-sci · 2013 · author #5
  60. nanoHUB.org: Experiences and Challenges in Software Sustainability for a Large Scientific Community cs.SE · 2013 · author #6
  61. Low Rank Approximation Method for Efficient Green's Function Calculation of Dissipative Quantum Transport cond-mat.mes-hall · 2013 · author #5
  62. Engineering Nanowire n-MOSFETs at Lg < 8 nm cond-mat.mes-hall · 2013 · author #6
  63. Design principles for HgTe based topological insulator devices cond-mat.mes-hall · 2013 · author #5
  64. Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping cond-mat.mtrl-sci · 2012 · author #6
  65. Silicon Quantum Electronics cond-mat.mes-hall · 2012 · author #6
  66. Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties physics.comp-ph · 2012 · author #6
  67. Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport cond-mat.mes-hall · 2011 · author #5
  68. Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors cond-mat.mes-hall · 2011 · author #4
  69. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells cond-mat.mtrl-sci · 2011 · author #4
  70. An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach cond-mat.mes-hall · 2011 · author #4
  71. Relating electronic structure to thermoelectric device performance cond-mat.mes-hall · 2011 · author #5
  72. Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires cond-mat.mes-hall · 2011 · author #3
  73. Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires cond-mat.mes-hall · 2011 · author #3
  74. Strain effects on the thermal properties of ultra-scaled Si nanowires cond-mat.mes-hall · 2011 · author #2
  75. Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots cond-mat.mtrl-sci · 2011 · author #4
  76. Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis cond-mat.mes-hall · 2011 · author #2
  77. Distributed NEGF Algorithms for the Simulation of Nanoelectronic Devices with Scattering cond-mat.mes-hall · 2011 · author #4
  78. Atomistic study of electronic structure of PbSe nanowires cond-mat.mes-hall · 2011 · author #2
  79. Atomistic approach to alloy scattering in $Si_{1-x}Ge_{x}$ cond-mat.mes-hall · 2011 · author #3
  80. Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons cond-mat.mes-hall · 2011 · author #3
  81. Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs cond-mat.mes-hall · 2011 · author #8
  82. Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5{\mu}m) cond-mat.mtrl-sci · 2010 · author #7
  83. Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs cond-mat.mes-hall · 2010 · author #5
  84. Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires cond-mat.mes-hall · 2010 · author #2
  85. Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs cond-mat.mes-hall · 2010 · author #2
  86. Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs cond-mat.mes-hall · 2010 · author #5
  87. Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs cond-mat.mes-hall · 2010 · author #7
  88. Atomistic modeling of the phonon dispersion and lattice properties of free-standing <100> Si nanowires cond-mat.mes-hall · 2010 · author #3
  89. Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires cond-mat.mes-hall · 2010 · author #3
  90. Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations cond-mat.mes-hall · 2010 · author #7
  91. Coherent electron transport by adiabatic passage in an imperfect donor chain cond-mat.mes-hall · 2010 · author #5
  92. On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias cond-mat.mes-hall · 2010 · author #3
  93. Thermionic Emission as a tool to study transport in undoped nFinFETs cond-mat.mes-hall · 2010 · author #8
  94. A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium cond-mat.mtrl-sci · 2010 · author #3
  95. Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers physics.comp-ph · 2010 · author #4
  96. Stark tuning of the charge states of a two-donor molecule in silicon cond-mat.mes-hall · 2009 · author #3
  97. Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors quant-ph · 2009 · author #4
  98. Orbital Stark effect and quantum confinement transition of donors in silicon cond-mat.mes-hall · 2009 · author #5
  99. Atomistic simulations of adiabatic coherent electron transport in triple donor systems cond-mat.mes-hall · 2009 · author #6
  100. Mapping donor electron wave function deformations at sub-Bohr orbit resolution quant-ph · 2009 · author #3
  101. Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass cond-mat.mes-hall · 2009 · author #2
  102. Multimillion Atom Simulations with NEMO 3-D physics.comp-ph · 2009 · author #16
  103. Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data physics.comp-ph · 2008 · author #5
  104. Valley Degeneracies in (111) Silicon Quantum Wells cond-mat.mes-hall · 2008 · author #4
  105. Bandstructure Effects in Silicon Nanowire Hole Transport cond-mat.mes-hall · 2008 · author #3
  106. Atomistic Non-equilibrium Green s Function Simulations of Graphene Nano-Ribbons in the Quantum Hall Regime cond-mat.mes-hall · 2008 · author #3
  107. Simulations of Nanowire Transistors: Atomistic vs. Effective Mass Models cond-mat.mtrl-sci · 2007 · author #4
  108. Bandstructure Effects in Silicon Nanowire Electron Transport cond-mat.mtrl-sci · 2007 · author #4
  109. Final Report on ECCS/NSF Workshop on Quantum, Molecular and High Performance Modeling and Simulation for Devices and Systems (QMHP) quant-ph · 2007 · author #2
  110. High precision quantum control of single donor spins in silicon quant-ph · 2007 · author #6
  111. Conduction band tight-binding description for silicon applied to phosphorous donors cond-mat.mtrl-sci · 2006 · author #3
  112. Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor cond-mat.mes-hall · 2006 · author #4
  113. Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach cond-mat.mes-hall · 2006 · author #2
  114. On the Validity of the Parabolic Effective-Mass Approximation for the Current-Voltage Calculation of Silicon Nanowire Transistors cond-mat.mes-hall · 2004 · author #4
  115. Performance Evaluation of Ballistic Silicon Nanowire Transistors with Atomic-basis Dispersion Relations cond-mat.mes-hall · 2004 · author #4
  116. Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures cond-mat.mtrl-sci · 2004 · author #5
  117. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots cond-mat.mtrl-sci · 2004 · author #5
  118. Effect of electron-nuclear spin interactions on electron-spin qubits localized in self-assembled quantum dots quant-ph · 2004 · author #4
  119. Boundary conditions for the electronic structure of finite-extent, embedded semiconductor nanostructures cond-mat.mtrl-sci · 2003 · author #4
  120. Valley splitting in strained silicon quantum wells cond-mat.mes-hall · 2003 · author #2
  121. Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions cond-mat · 2000 · author #5

Mentions

  • 1006.4174 #3 · backfill · confidence 0.70 Gerhard Klimeck
  • 1003.5441 #8 · backfill · confidence 0.70 Gerhard Klimeck
  • 1003.4926 #3 · backfill · confidence 0.70 Gerhard Klimeck
  • 1003.4570 #4 · backfill · confidence 0.70 Gerhard Klimeck
  • 0907.3929 #3 · backfill · confidence 0.70 Gerhard Klimeck
  • 0905.3200 #4 · backfill · confidence 0.70 Gerhard Klimeck
  • 0904.4281 #5 · backfill · confidence 0.70 Gerhard Klimeck
  • 0903.1142 #6 · backfill · confidence 0.70 Gerhard Klimeck
  • 0902.1515 #3 · backfill · confidence 0.70 Gerhard Klimeck
  • 0901.4657 #2 · backfill · confidence 0.70 Gerhard Klimeck
  • 0901.1890 #16 · backfill · confidence 0.70 Gerhard Klimeck
  • 0812.3814 #5 · backfill · confidence 0.70 Gerhard Klimeck
  • 0812.3681 #4 · backfill · confidence 0.70 Gerhard Klimeck
  • 0809.3492 #3 · backfill · confidence 0.70 Gerhard Klimeck
  • 0801.1159 #3 · backfill · confidence 0.70 Gerhard Klimeck
  • 0801.0125 #4 · backfill · confidence 0.70 Gerhard Klimeck
  • 0801.0123 #4 · backfill · confidence 0.70 Gerhard Klimeck
  • 0709.3310 #2 · backfill · confidence 0.70 Gerhard Klimeck
  • 0705.2079 #6 · backfill · confidence 0.70 Gerhard Klimeck

Frequent Coauthors