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Kazuki Nomoto

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Papers (7)

  1. Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy physics.app-ph · 2018 · author #4
  2. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas physics.app-ph · 2018 · author #3
  3. Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy cond-mat.mtrl-sci · 2017 · author #3
  4. Electron Mobility in Polarization-doped Al$\mathrm{_{0-0.2}}$GaN with a Low Concentration Near 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ cond-mat.mes-hall · 2017 · author #3
  5. Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates cond-mat.mtrl-sci · 2016 · author #9
  6. Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs cond-mat.mes-hall · 2016 · author #2
  7. Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits cond-mat.mtrl-sci · 2015 · author #6

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