Direct PL measurement yields 15(3) ns singlet lifetime for V_B^- in hBN plus extracted transition rates from 9-level model fit to polarized dynamics.
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Direct Measurement of the Singlet Lifetime and Photoexcitation Behavior of the Boron Vacancy Center in Hexagonal Boron Nitride
Direct PL measurement yields 15(3) ns singlet lifetime for V_B^- in hBN plus extracted transition rates from 9-level model fit to polarized dynamics.