Metal droplets reduce In incorporation in InGaN epilayers grown at 450 C by PAMBE, with the reduction increasing with droplet density and coverage via a model of In/Ga mobility and VLS growth under droplets.
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Metal Droplet Effects on the Composition of Ternary Nitrides
Metal droplets reduce In incorporation in InGaN epilayers grown at 450 C by PAMBE, with the reduction increasing with droplet density and coverage via a model of In/Ga mobility and VLS growth under droplets.