Oxygen vacancies in (LaPrNdSmEu)NiO3-δ films first lower the metal-insulator transition temperature and then, at higher vacancy levels, drive the films into a fully insulating and disordered state.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.str-el 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Janus-faced influence of oxygen vacancy in high entropy oxide films with Mott electrons
Oxygen vacancies in (LaPrNdSmEu)NiO3-δ films first lower the metal-insulator transition temperature and then, at higher vacancy levels, drive the films into a fully insulating and disordered state.