A non-volatile superconducting tunnelling magnetoresistance memory is realized by exchange-field engineering of the superconducting gap, producing two switchable gap voltages and robust TMR with nanowatt read power and zero standby dissipation across the full superconducting temperature range.
) (b)AP state (measured at −𝐻!
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Non-volatile superconducting tunnelling magnetoresistance memory enabled by exchange-field gap engineering
A non-volatile superconducting tunnelling magnetoresistance memory is realized by exchange-field engineering of the superconducting gap, producing two switchable gap voltages and robust TMR with nanowatt read power and zero standby dissipation across the full superconducting temperature range.