Simulations find higher substitutional Al after 500 K implantation than 900 K at high doses in 4H-SiC due to reduced stable interstitial clusters, despite better initial crystallinity at 900 K, plus a new Al diffusion path and carbon-antisite kick-out mechanism.
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The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers
Simulations find higher substitutional Al after 500 K implantation than 900 K at high doses in 4H-SiC due to reduced stable interstitial clusters, despite better initial crystallinity at 900 K, plus a new Al diffusion path and carbon-antisite kick-out mechanism.