Few-layer PtSe2 devices break down by self-heating at room temperature but by carrier multiplication at 5 K, and heat escapes about twice as well through h-BN as through SiO2.
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Revealing the Breakdown Mechanism and Heat Dissipation in Few-Layered semimetallic PtSe2
Few-layer PtSe2 devices break down by self-heating at room temperature but by carrier multiplication at 5 K, and heat escapes about twice as well through h-BN as through SiO2.