Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Radio-frequency reflectometry in silicon carbide large-area transistors
Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.