A 2-THz interfacial phonon mode at GaP/Si remains robust after high-temperature overgrowth, with amplitude set by carrier coupling plus structural reorganization at the interface.
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Robust coherent phonon mode at GaP/Si(001) heterointerface
A 2-THz interfacial phonon mode at GaP/Si remains robust after high-temperature overgrowth, with amplitude set by carrier coupling plus structural reorganization at the interface.