TiO2 FeFETs with HZO ferroelectric dielectric layers achieve on/off ratios up to 10^7, off-state leakage below 10^-12 A, and memory windows of 3-8 V across varied gate and channel lengths.
Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂,
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High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing
TiO2 FeFETs with HZO ferroelectric dielectric layers achieve on/off ratios up to 10^7, off-state leakage below 10^-12 A, and memory windows of 3-8 V across varied gate and channel lengths.