Time-resolved THz-SNOM spectra show that InP photoconductivity decay is governed by electron diffusion and surface band-bending drift, while GaAs behaves as a simple exponentially decaying photoexcited layer.
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Dynamics of local photoconductivity in GaAs and InP investigated by THz SNOM
Time-resolved THz-SNOM spectra show that InP photoconductivity decay is governed by electron diffusion and surface band-bending drift, while GaAs behaves as a simple exponentially decaying photoexcited layer.