Precession-assisted 4D-STEM combined with Sobel filter and SVD post-processing enables accurate, artefact-reduced mapping of electric fields and charge distributions across random grain boundaries in BaTiO3 and SrTiO3.
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Accurate Nanoscale Mapping of Electric Fields across Random Grain Boundaries in Polycrystalline Oxides Using Precession-Assisted 4D-STEM
Precession-assisted 4D-STEM combined with Sobel filter and SVD post-processing enables accurate, artefact-reduced mapping of electric fields and charge distributions across random grain boundaries in BaTiO3 and SrTiO3.