An industrially microfabricated 3D ion trap on stacked wafers achieves 1 eV trap depth with 2.5 micrometer alignment precision and reports motional heating rates as low as 40 phonons/s at 1 MHz.
Shor, In Proceedings 35th Annual Symposium on Foundations of Computer Science
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Industrially Microfabricated Ion Trap with 1 eV Trap Depth
An industrially microfabricated 3D ion trap on stacked wafers achieves 1 eV trap depth with 2.5 micrometer alignment precision and reports motional heating rates as low as 40 phonons/s at 1 MHz.