Low-field electron and hole mobilities in silicon decrease by ~60% at fluences of 6e17 cm^{-2} expected for FCC-hh inner detector layers.
Schenk,A model for the field and temperature dependence of Shockley–Read–Hall lifetimes in silicon,Solid-State Electronics,35.11(1992), pp
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Low-field carrier mobilities in silicon irradiated to extreme fluences
Low-field electron and hole mobilities in silicon decrease by ~60% at fluences of 6e17 cm^{-2} expected for FCC-hh inner detector layers.