Direct 3D atom probe maps reveal that Si/SiGe buried interfaces have 0.2-0.3 nm roughness, 8-10 nm lateral correlation lengths, and lower growth temperature sharpens the interfaces.
Fujiwara, Spectroscopic Ellipsometry Principles and Applications, John Wiley & Sons, Ltd, 2003
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3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices
Direct 3D atom probe maps reveal that Si/SiGe buried interfaces have 0.2-0.3 nm roughness, 8-10 nm lateral correlation lengths, and lower growth temperature sharpens the interfaces.