SiMOS quantum dots exhibit an order of magnitude larger spin-valley coupling than Si/SiGe devices, with similar angular dependence that can be minimized at specific magnetic field orientations.
Addinginthespindegreeoffreedom, weare interested in evaluating the spin-orbit coupling between ground and first-excited valley-orbital states having op- posite spin orientation
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Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
SiMOS quantum dots exhibit an order of magnitude larger spin-valley coupling than Si/SiGe devices, with similar angular dependence that can be minimized at specific magnetic field orientations.