Using DFT, kinetic Monte Carlo, and quantum transport, the authors show that TiO2-terminated SrTiO3 switches via oxygen-vacancy-modulated Schottky barriers, while SrO-terminated cells switch filamentarily.
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
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Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells
Using DFT, kinetic Monte Carlo, and quantum transport, the authors show that TiO2-terminated SrTiO3 switches via oxygen-vacancy-modulated Schottky barriers, while SrO-terminated cells switch filamentarily.