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Excess dissipation in a single-electron box: The Sisyphus resistance

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We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

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Compact Quantum Dot Models for Analog Microwave co-Simulation

quant-ph · 2025-02-10 · conditional · novelty 5.0

Quantum-dot devices are modeled in Verilog-A with the Lindblad master equation, enabling mixed quantum-classical circuit co-simulation in Cadence Spectre with results matching analytic theory.

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  • Compact Quantum Dot Models for Analog Microwave co-Simulation quant-ph · 2025-02-10 · conditional · none · ref 38 · internal anchor

    Quantum-dot devices are modeled in Verilog-A with the Lindblad master equation, enabling mixed quantum-classical circuit co-simulation in Cadence Spectre with results matching analytic theory.