DFT calculations predict that CrI3 proximity induces a 40 meV exchange bias in MnBi2Te4 films, enabling zero-field QAH states with Chern numbers 1 and 3.
Gapless surface Dirac cone in antiferromagnetic topological insulator MnBi$_2$Te$_4$
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abstract
The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapless Dirac cone at the (0001) surface of MnBi$_2$Te$_4$ exists between the bulk band gap. Such unexpected surface state remains unchanged across the bulk N\'eel temperature, and is even robust against severe surface degradation, indicating additional topological protection. Through symmetry analysis and $\textit{ab}$-$\textit{initio}$ calculations we consider different types of surface reconstruction of the magnetic moments as possible origins giving rise to such linear dispersion. Our results reveal that the intrinsic magnetic topological insulator hosts a rich platform to realize various topological phases such as topological crystalline insulator and time-reversal-preserved topological insulator, by tuning the magnetic configurations.
fields
cond-mat.mtrl-sci 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
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Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure
DFT calculations predict that CrI3 proximity induces a 40 meV exchange bias in MnBi2Te4 films, enabling zero-field QAH states with Chern numbers 1 and 3.