DFT analysis of GdRu2X2 (X = Si, Ge, Sn) links increased destabilizing band energy and competing exchange interactions to easier skyrmion formation, predicting GdRu2Sn2 as a high-temperature, low-field skyrmion host.
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Antibonding and Electronic Instabilities in GdRu2X2 (X = Si, Ge, Sn): A New Pathway Toward Developing Centrosymmetric Skyrmion Materials
DFT analysis of GdRu2X2 (X = Si, Ge, Sn) links increased destabilizing band energy and competing exchange interactions to easier skyrmion formation, predicting GdRu2Sn2 as a high-temperature, low-field skyrmion host.