An intense femtosecond pulse creates depth-dependent electron-hole quasi-temperatures that decay smoothly in silicon and stepwise in 3C-SiC, driven by tunneling versus multiphoton absorption and by band structure.
Sudrie , author A
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Macroscopic electron-hole distribution in silicon and cubic silicon carbide
An intense femtosecond pulse creates depth-dependent electron-hole quasi-temperatures that decay smoothly in silicon and stepwise in 3C-SiC, driven by tunneling versus multiphoton absorption and by band structure.