Aluminium deposited on germanium and annealed at 350 degrees Celsius forms a p+ Al-Ge contact layer whose aluminium diffusion depth is roughly four times the deposited film thickness.
From Ge(Li) detectors to gamma-ray tracking arrays–50 years of gamma spectroscopy with germanium detectors,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal
Aluminium deposited on germanium and annealed at 350 degrees Celsius forms a p+ Al-Ge contact layer whose aluminium diffusion depth is roughly four times the deposited film thickness.