The honeycomb Ge-composition pattern in oxidative-SPE SiGe/Si(111) films is the imprint of a Shockley-partial dislocation network whose measured spacing (13.1 nm) matches the value predicted from Moiré-measured strain (12.9 nm), enabling SEM-based strain readout.
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Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy
The honeycomb Ge-composition pattern in oxidative-SPE SiGe/Si(111) films is the imprint of a Shockley-partial dislocation network whose measured spacing (13.1 nm) matches the value predicted from Moiré-measured strain (12.9 nm), enabling SEM-based strain readout.