Flash lamp annealing at 4.9 J/cm2 reduces nitrogen-rich Cu2O film resistivity to 0.045 Ohm cm, while higher energy densities degrade conductivity.
The absorption of the glass substrate can be neglected
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Low-resistivity nitrogen-doped p-type Cu2O thin films enabled by millisecond flash lamp annealing
Flash lamp annealing at 4.9 J/cm2 reduces nitrogen-rich Cu2O film resistivity to 0.045 Ohm cm, while higher energy densities degrade conductivity.