DFT calculations show that doping a single layer of Si3N4 with electrons or holes switches it from insulator to metal, but the paper's electronegativity and conductivity interpretations are flawed.
Hoffmann, Relationship between microstructure and mechanical properties of silicon nitride ceramics, Pure Appl
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Electronic structure of SLSiN under charge density modulation
DFT calculations show that doping a single layer of Si3N4 with electrons or holes switches it from insulator to metal, but the paper's electronegativity and conductivity interpretations are flawed.