Hole doping at x ≈ 0.4 in La3-xSrxNi2O7 produces nearly perfect Fermi-surface nesting at Q = (π, π), raising the superconducting eigenvalue to experimentally accessible levels at ambient pressure.
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LaAg2Ge2 thin films show 22.5% positive magnetoresistance at 9 T and twofold anisotropic angle-dependent magnetoresistance with field-independent dip/peak features, captured by a high-mobility electron two-carrier model.
citing papers explorer
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Nearly perfect Fermi surface nesting in hole-doped La$_3$Ni$_2$O$_7$ enables bulk superconductivity without pressure or strain
Hole doping at x ≈ 0.4 in La3-xSrxNi2O7 produces nearly perfect Fermi-surface nesting at Q = (π, π), raising the superconducting eigenvalue to experimentally accessible levels at ambient pressure.
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Anisotropic multiband magnetotransport in LaAg$_2$Ge$_2$ thin films
LaAg2Ge2 thin films show 22.5% positive magnetoresistance at 9 T and twofold anisotropic angle-dependent magnetoresistance with field-independent dip/peak features, captured by a high-mobility electron two-carrier model.