Low-field electron and hole mobilities in silicon decrease by ~60% at fluences of 6e17 cm^{-2} expected for FCC-hh inner detector layers.
Croitoru et al,Study of resistivity and majority carrier concentration of silicon damaged by neutron irradiation,Nuclear Physics B–Proceedings Supplements,61.3(1998), pp
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.ins-det 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Low-field carrier mobilities in silicon irradiated to extreme fluences
Low-field electron and hole mobilities in silicon decrease by ~60% at fluences of 6e17 cm^{-2} expected for FCC-hh inner detector layers.