Experimental data and modeling show electron velocity saturates above 2 million cm/s (averaged) and 4 million cm/s (band carriers) in 50-100 nm IGZO FETs at high fields.
Trapped carrier scattering and charge transport in high‐mobility amorphous metal oxide thin‐film transistors
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Velocity-field characteristics and device performance in nanoscale amorphous oxide Thin-Film-Transistors
Experimental data and modeling show electron velocity saturates above 2 million cm/s (averaged) and 4 million cm/s (band carriers) in 50-100 nm IGZO FETs at high fields.