10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.
Growth and ferroelectric properties of sputtered aluminum nitride-based thin films
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Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.