Hall bar transistors on Si/SiGe grown in a BiCMOS pilot line show reproducible peak mobility near 4.25x10^5 cm2/Vs and percolation density near 5.9x10^10 cm-2 across six wafers.
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High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Hall bar transistors on Si/SiGe grown in a BiCMOS pilot line show reproducible peak mobility near 4.25x10^5 cm2/Vs and percolation density near 5.9x10^10 cm-2 across six wafers.