For 30 degree twisted double bilayer graphene, low-energy electrons are confined to individual bilayers, while at Q points interlayer coupling creates new van Hove singularities, optical peaks, and 12-fold-symmetry-like charge states.
Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
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abstract
We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
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cond-mat.mtrl-sci 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
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Electronic structure of 30{\deg} twisted double bilayer graphene
For 30 degree twisted double bilayer graphene, low-energy electrons are confined to individual bilayers, while at Q points interlayer coupling creates new van Hove singularities, optical peaks, and 12-fold-symmetry-like charge states.