Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.
Our assumption is that the standard gradi- ent descent algorithm performs well on ˆf, but that the computed function to be optimized isf, which we refer to as the target function
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
citation-role summary
background 1
citation-polarity summary
fields
quant-ph 1years
2026 1verdicts
UNVERDICTED 1roles
background 1polarities
background 1representative citing papers
citing papers explorer
-
Enhancing Coherence of Spin Centers in p-n Diodes via Optimization Algorithms
Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.