h-BN/Ni memristors switch in air but not in vacuum, and the authors attribute the difference to the loss of water-driven redox reactions needed for filament formation.
(17) Menzel, S.; Tappertzhofen, S.; Waser, R.; Valov, I
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Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
h-BN/Ni memristors switch in air but not in vacuum, and the authors attribute the difference to the loss of water-driven redox reactions needed for filament formation.