Nitrogen doping and annealing at 500-600 C increase the ODMR contrast of silicon vacancy ensembles in 4H-SiC by about 3x, with only modest loss of photoluminescence.
The magnetic field along the vertical axis is 5.46 mT/A, with experiments performed at either 100 mA (0.55 mT) or 300 mA (1.64 mT)
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The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
Nitrogen doping and annealing at 500-600 C increase the ODMR contrast of silicon vacancy ensembles in 4H-SiC by about 3x, with only modest loss of photoluminescence.